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www.irf.com 1 irf7456pbf smps mosfet hexfet power mosfet high frequency dc-dc converters with synchronous rectification applications ultra-low r ds(on) at 4.5v v gs low charge and low gate impedance to reduce switching losses fully characterized avalanche voltage and current v dss r ds(on) max i d 20v 0.0065 ? 16a typical smps topologies telecom 48v input converters with logic-level driven synchronous rectifiers
through are on page 8 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 10v 16 i d @ t a = 70c continuous drain current, v gs @ 10v 13 a i dm pulsed drain current 130 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0 .02 w/c t j , t stg junction and storage temperature range -55 to + 150 c parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a lead-free
irf7456pbf 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curr ent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 2.5a, v gs = 0v t rr reverse recovery time ??? 48 72 ns t j = 25c, i f = 2.5a q rr reverse recoverycharge ??? 74 110 nc di/dt = 100a/s diode characteristics 2.5 130 parameter typ. max. units e as single pulse avalanche energy ??? 250 mj i ar avalanche current ??? 16 a e ar repetitive avalanche energy ??? 0.25 mj avalanche characteristics parameter min. typ. max. units conditions g fs forward transconductance 44 ??? ??? s v ds = 10v, i d = 16a q g total gate charge ??? 41 62 i d = 16a q gs gate-to-source charge ??? 9.7 15 nc v ds = 16v q gd gate-to-drain ("miller") charge ??? 18 27 v gs = 5.0v, t d(on) turn-on delay time ??? 20 ??? v dd = 10v t r rise time ??? 25 ??? i d = 1.0a t d(off) turn-off delay time ??? 50 ??? r g = 6.0 ? t f fall time ??? 52 ??? v gs = 4.5v c iss input capacitance ??? 3640 ??? v gs = 0v c oss output capacitance ??? 1570 ??? v ds = 15v c rss reverse transfer capacitance ??? 330 ??? pf ? = 1.0mhz dynamic @ t j = 25c (unless otherwise specified) ns static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance ? parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.024 ??? v/c reference to 25c, i d = 1ma ??? 0.00470.0065 v gs = 10v, i d = 16a ??? 0.00570.0075 v gs = 4.5v, i d = 13a ??? 0.011 0.020 v gs = 2.8v, i d = 3.5a v gs(th) gate threshold voltage 0.6 ??? 2.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v
irf7456pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.0v 2.7v 2.5v 2.25v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.0v 2.7v 2.5v 2.25v 2.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 16a 2.0 2.2 2.4 2.6 2.8 3.0 3.2 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width
irf7456pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 16a v = 16v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area
irf7456pbf www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. case temperature
1 0.1 %

+ -

irf7456pbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7.2a 10a 16a 0 20406080100 i d , drain current (a) 0.0046 0.0050 0.0054 0.0058 0.0062 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 0 4 8 12 16 v gs, gate -to -source voltage (v) 0.004 0.006 0.008 0.010 0.012 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 16a
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$%$ ! ! ! $$ & ! so-8 part marking information

so-8 package outline(mosfet & fetky) dimensions are shown in milimeters (inches)
irf7456pbf 8 www.irf.com when mounted on 1 inch square copper board, t<10 sec 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.0mh r g = 25 ? , i as = 16a. pulse width 300s; duty cycle 2%. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2008

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